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MTBH0N25L3 bảng dữ liệu(PDF) 2 Page - Cystech Electonics Corp. |
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MTBH0N25L3 bảng dữ liệu(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 2/9 MTBH0N25L3 Preliminary CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TA=25 °C, VGS=10V 1.2 Continuous Drain Current @ TA=70 °C, VGS=10V ID 0.96 Pulsed Drain Current *1 IDM 8 Avalanche Current @ L=0.1mH IAS 5 A Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω EAS 1.25 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 0.625 mJ Total Power Dissipation @TA=25℃ 2.5 Total Power Dissipation @TA=70℃ PD 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 16.7 Thermal Resistance, Junction-to-ambient, max RθJA 50 (Note) °C/W Note : When mounted on a 1 in 2 pad of 2 oz. copper. Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 250 - - VGS=0V, ID=250μA VGS(th) 1 - 2.5 V VDS =VGS, ID=250μA GFS *1 - 4 - S VDS =10V, ID=1A IGSS - - ± 100 nA VGS=±20V, VDS=0V - - 1 VDS =200V, VGS =0V IDSS - - 25 μA VDS =200V, VGS =0V, Tj=125 °C - 722 920 VGS =10V, ID=1A RDS(ON) *1 - 732 980 mΩ VGS =4.5V, ID=1A Dynamic Qg *1, 2 - 12.3 18 Qgs *1, 2 - 1.5 2.5 Qgd *1, 2 - 3.5 5.5 nC VDS=200V, VGS=10V, ID=1A td(ON) *1, 2 - 6.6 10 tr *1, 2 - 16 24 td(OFF) *1, 2 - 29.6 44 tf *1, 2 - 23 35 ns VDS=12V, ID=1A, VGS=10V, RG=6Ω |
Số phần tương tự - MTBH0N25L3 |
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Mô tả tương tự - MTBH0N25L3 |
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