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FFA60UP20DN bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  Ultrafast Rectifier
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Rev. A, August 2004
©2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings (per diode) T
C=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode) T
C=25 °C unless otherwise noted
* Pulse Test: Pulse Width=300
µs, Duty Cycle=2%
Symbol
Parameter
Value
Units
VRRM
Peak Repetitive Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current
@ TC = 100°C30
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
300
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Symbol
Parameter
Value
Units
RθJC
Maximum Thermal Resistance, Junction to Case
1.4
°C/W
Symbol
Parameter
Min.
Typ.
Max.
Units
VFM *
Maximum Instantaneous Forward Voltage
IF = 30A
IF = 30A
TC = 25 °C
TC = 100 °C
-
-
-
-
1.15
1.0
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
TC = 25 °C
TC = 100 °C
-
-
-
-
10
100
µA
trr
Irr
Qrr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
(IF =30A, di/dt = 200A/µs)
-
-
-
32
2.4
38.4
-
-
-
ns
A
nC
trr
Maximum Reverse Recovery Time
(IF =1A, di/dt = 100A/µs)
-
-
40
ns
WAVL
Avalanche Energy (L=40mH)
2
-
-
mJ
FFA60UP20DN
Features
• Ultrafast with soft recovery
(@ IF = 1A), < 40ns
• Reverse Voltage, 200V
• Forward Voltage (@ TC = 100°C), < 1V
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
1
2
3
TO-3P
Ultrafast Rectifier
1. Anode 2.Cathode 3. Anode


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