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MCP6V91 bảng dữ liệu(PDF) 5 Page - Microchip Technology |
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MCP6V91 bảng dữ liệu(HTML) 5 Page - Microchip Technology |
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5 / 48 page  2015-2016 Microchip Technology Inc. DS20005434B-page 5 MCP6V91/1U/2/4 TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =10kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Amplifier AC Response Gain Bandwidth Product GBWP — 10 — MHz Slew Rate SR — 9.5 — V/µs Phase Margin PM — 60 — °C G = +1 Amplifier Noise Response Input Noise Voltage Eni —0.08 — µVP-P f=0.01 Hz to 1 Hz Eni —0.24 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —11 — nV/√Hz f < 2 kHz, VDD =5.5V Input Noise Current Density ini —6 — fA/√Hz Amplifier Distortion(1) Intermodulation Distortion (AC) IMD — 35 — µVPK VCM tone = 100 mVPK at 1 kHz, GN =11, RTI Amplifier Step Response Start-Up Time tSTR — 100 — µs G = +1, 0.1% VOUT settling (Note 2) Offset Correction Settling Time tSTL —60 — µs G = +1, VIN step of 2V, VOS within 100 µV of its final value Output Overdrive Recovery Time tODR — 65 — µs G = -10, ±0.5V input overdrive to VDD/2, VIN 50% point to VOUT 90% point (Note 3) EMI Protection EMI Rejection Ratio EMIRR — 88 — dB VIN =0.1 VPK, f = 400 MHz —95 — VIN =0.1 VPK, f = 900 MHz —93 — VIN =0.1 VPK, f = 1800 MHz —90 — VIN =0.1 VPK, f = 2400 MHz Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an IMD tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI). 2: High gains behave differently; see Section 4.3.3 “Offset at Power-Up”. 3: tSTL and tODR include some uncertainty due to clock edge timing. TABLE 1-3: TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.4V to +5.5V, VSS =GND. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Note 1 Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5LD-SC70 JA —209 — °C/W Thermal Resistance, 5LD-SOT-23 JA —201 — °C/W Thermal Resistance, 8L-2x3 TDFN JA —53 — °C/W Thermal Resistance, 8L-MSOP JA —211 — °C/W Thermal Resistance, 14L-TSSOP JA —100 — °C/W Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C). |
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