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MC74VHC1G08 bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Single 2-Input AND Gate
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  MC74VHC1G08_15 Datasheet HTML 1Page - ON Semiconductor MC74VHC1G08_15 Datasheet HTML 2Page - ON Semiconductor MC74VHC1G08_15 Datasheet HTML 3Page - ON Semiconductor MC74VHC1G08_15 Datasheet HTML 4Page - ON Semiconductor MC74VHC1G08_15 Datasheet HTML 5Page - ON Semiconductor MC74VHC1G08_15 Datasheet HTML 6Page - ON Semiconductor  
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MC74VHC1G08
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
−20
mA
IOK
DC Output Diode Current
$20
mA
IOUT
DC Output Sink Current
$12.5
mA
ICC
DC Supply Current per Supply Pin
$25
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
)150
°C
qJA
Thermal Resistance
SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
PD
Power Dissipation in Still Air at 85
°C
SC70−5/SC−88A
TSOP−5
150
200
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
$500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
−55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature


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