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STGW75M65DF2 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 17 page June 2016 DocID028695 Rev 2 1/17 This is information on a product in full production. www.st.com STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 75 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGW75M65DF2 G75M65DF2 TO-247 Tube STGWA75M65DF2 TO-247 long leads |
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