STF10N60DM2 datasheet(4/12 Pages) STMICROELECTRONICS

tên linh kiện	STF10N60DM2

Giải thích chi tiết về linh kiện	N-channel 600 V, 0.440 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package

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Electrical characteristics

STF10N60DM2

4/12

DocID029381 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1.5

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

0.440

0.530

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

529

-

pF

Coss

Output capacitance

-

28

-

Crss

Reverse transfer

capacitance

-

0.72

-

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

47

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

6.5

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 8 A, VGS = 10 V

(see Figure 15: "Test circuit for

gate charge behavior")

-

15

-

nC

Qgs

Gate-source charge

-

3.7

-

Qgd

Gate-drain charge

-

8

-

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 4 A RG = 4.7

Ω,

VGS = 10 V (see Figure 14: "Test

circuit for resistive load switching

times" and Figure 19: "Switching

time waveform")

-

11

-

ns

tr

Rise time

-

5

-

td(off)

Turn-off delay time

-

28

-

tf

Fall time

-

11.5

-

Số phần tương tự - STF10N60DM2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STF10N60M2	657Kb / 13P	Extremely low gate charge March 2017 Rev 4

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STMicroelectronics	STD10N60DM2	813Kb / 14P	N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package June 2016 Rev 1
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