STGWT40HP65FB datasheet(5/17 Pages) STMICROELECTRONICS

tên linh kiện	STGWT40HP65FB

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

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STGWT40HP65FB

Electrical characteristics

DocID028465 Rev 3

5/17

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 5 A, VR = 400 V,

VGE = 15 V (see Figure

28: "Test circuit for

inductive load switching")

di/dt = 1000 A/µs

-

140

ns

Qrr

Reverse recovery charge

-

21

nC

Irrm

Reverse recovery current

-

6.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

430

A/µs

Err

Reverse recovery energy

-

1.6

µJ

trr

Reverse recovery time

IF = 5 A, VR = 400 V,

VGE = 15 V TJ = 175 °C

(see Figure 28: "Test

circuit for inductive load

switching")

di/dt = 1000 A/µs

-

200

ns

Qrr

Reverse recovery charge

-

47.3

nC

Irrm

Reverse recovery current

-

9.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

428

A/µs

Err

Reverse recovery energy

-

3.2

µJ

Số phần tương tự - STGWT40HP65FB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGWT40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed March 2014 Rev 4
STMicroelectronics	STGWT40H65FB	1Mb / 21P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed March 2017 Rev 7

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Mô tả tương tự - STGWT40HP65FB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGB40H65FB	975Kb / 17P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
	STGW40H65DFB-4	479Kb / 15P	Trench gate field-stop 650 V, 40 A high speed HB series IGBT June 2019
	STGFW40H65FB	1Mb / 21P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed March 2017 Rev 7
	STGW40H65DFB	503Kb / 16P	Trench gate field-stop 650 V, 40 A high speed HB series IGBT DS9533 - Rev 9 - June 2019
	STGFW20H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 20 A high speed August 2014 Rev 1
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed July 2015 Rev 5
	STGY80H65DFB	1Mb / 22P	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed May 2015 Rev 6
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT DS11665 - Rev 3 - June 2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed March 2014 Rev 4

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