Characteristics

STPS20H100C-Y

2/8

DocID027082 Rev 1

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward rms current

30

A

Average forward current,

δ = 0.5, T

per diode

10

A

per device

20

Surge non repetitive forward current

250

A

Non repetitive peak reverse current

3

A

(1)

Repetitive peak avalanche power

780

W

Storage temperature range

-65 to +175

°C

-40 to +175

°C

1.

For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche

power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”.

2.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

per diode

1.6

°C/W

per device

0.9

coupling

0.15

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

--

4.5

µA

-

2

6

mA

(2)

Forward voltage drop

-

-

0.77

V

-

0.59

0.64

-

-

0.88

-

0.67

0.73

1.

2.