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2 / 8 page Characteristics STPS20H100C-Y 2/8 DocID027082 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, δ = 0.5, T c = 160 °C per diode 10 A per device 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM (1) Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 780 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature(2) -40 to +175 °C 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. 2. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj < 1 Rth(j-a) Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case per diode 1.6 °C/W per device 0.9 Rth(c) coupling 0.15 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -- 4.5 µA Tj = 125 °C - 2 6 mA VF (2) Forward voltage drop Tj = 25 °C IF = 10 A - - 0.77 V Tj = 125 °C - 0.59 0.64 Tj = 25 °C IF = 20 A - - 0.88 Tj = 125 °C - 0.67 0.73 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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