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1N19 bảng dữ liệu(PDF) 1 Page - SUNMATE electronic Co., LTD |
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1N19 bảng dữ liệu(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 2 page Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=70 Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG A IF(AV) 3.Thermal resistance junction to ambient mA IR IFSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4. 0V DC. A 50 - 55 ---- + 125 - 55 ---- + 150 110 1.0 10.0 1.0 40 Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A VF 14 20 V 40 28 30 21 30 25.0 20 0.90 0.60 0.45 0.75 0.55 0.875 1N17 - 1N19 SCHOTTKY BARRIER RECTIFIER DIODES CURRENT: 1.0 A VOLTAGE RANGE: 20 - 40V R-1 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.099 (2.51) 0.095 (2.42) 0.138 (3.5) 0.114 (2.9) 1.00 (25.4) MIN. 0.024 (0.6) 0.020 (0.5) Maximum Ratings and Electrical Characteristics T A = 25 °C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Mechanical Data Features ! ! ! ! ! ! ! ! ! ! ! ! Epitaxial construction Low forward voltage drop,low switching losses The plastic material carries U/L recognition 94V-0 Metal-Semiconductor junction with guard ring High surge capability Foruse inlowvoltage,high frequencyinvertersfree wheeling,and polarity protection applications Terminals: Axial lead ,solderable per Polarity: Color band denotes cathode MIL- STD-202 Method 208 Case:JEDEC R-1 molded plastic Weight:0.007 ounces,0.20 grams 1 of 2 www.sunmate.tw Characteristic Symbol Unit 1N17 1N18 1N19 |
Số phần tương tự - 1N19 |
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Mô tả tương tự - 1N19 |
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