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74LVC06A bảng dữ liệu(PDF) 4 Page - ON Semiconductor |
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74LVC06A bảng dữ liệu(HTML) 4 Page - ON Semiconductor |
4 / 7 page 74LVC06A www.onsemi.com 4 DC ELECTRICAL CHARACTERISTICS Symbol Unit −40 to +125 5C −40 to +85 5C Conditions Parameter Symbol Unit Max Typ (Note 4) Min Max Typ (Note 4) Min Conditions Parameter ICC Supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V − 0.1 10 − 0.1 40 mA DICC Additional supply current per input pin; VI = VCC − 0.6 V; IO = 0 A; VCC = 2.7 V to 5.5 V − 5 500 − 5 5000 mA 4. All typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) Symbol Parameter Conditions −40 to +85 5C −40 to +125 5C Unit Min Typ (Note 5) Max Min Typ (Note 5) Max tpZL OFF−state to LOW propagation delay An to On VCC = 1.2 V − 9.0 − − − − ns VCC = 1.65 V to 1.95 V 0.5 2.8 5.7 0.5 − 6.7 VCC = 2.3 V to 2.7 V 0.5 1.9 3.1 0.5 − 4.0 VCC = 2.7 V 0.5 1.8 3.9 0.5 − 5.0 VCC = 3.0 V to 3.6 V 0.5 1.8 3.7 0.5 − 5.0 VCC = 4.5 V to 5.5 V 0.5 1.5 2.5 0.5 − 5.0 tpLZ LOW to OFF−state propagation delay An to On VCC = 1.2 V − 10.0 − − − − ns VCC = 1.65 V to 1.95 V 0.5 2.6 5.7 0.5 − 6.7 VCC = 2.3 V to 2.7 V 0.5 1.4 3.1 0.5 − 4.0 VCC = 2.7 V 0.5 2.6 3.9 0.5 − 5.0 VCC = 3.0 V to 3.6 V 0.5 2.2 3.7 0.5 − 5.0 VCC = 4.5 V to 5.5 V 0.5 1.5 2.6 − − 3.5 5. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise. DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition Min Typ Max Unit VOLP Dynamic LOW Peak Voltage (Note 6) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V VOLV Dynamic LOW Valley Voltage (Note 6) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 6. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS (TA = +25°C) Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 5.0 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 6.0 pF CPD Power Dissipation Capacitance (Note 7) Per input; VI = GND or VCC pF VCC = 1.65 V to 1.95 V 6.5 VCC = 2.3 V to 2.7 V 6.9 VCC = 3.0 V to 3.6 V 7.2 7. CPD is used to determine the dynamic power dissipation (PD in mW) PD = CPD * VCC2 x fi * N + L (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching L (CL * VCC2) |
Số phần tương tự - 74LVC06A_15 |
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Mô tả tương tự - 74LVC06A_15 |
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