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N01S830BAT22ET bảng dữ liệu(PDF) 5 Page - ON Semiconductor

tên linh kiện N01S830BAT22ET
Giải thích chi tiết về linh kiện  1 Mb Ultra-Low Power Serial SRAM
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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N01S830HA, N01S830BA
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5
Figure 4. DUAL Read Sequence
CS
SIO[1:0]
04
3
25
112
15
14
16
13
17
SCK
A11
A0
18
20
19
C3
C2
A10
A3
A2
A1
H0
H0
L0
L0
H1
H1
L1
L1
MSB
MSB
Notes:
Instruction
24−bit address
Data out
X
X
21
22
C1
C0
X
X
23
24
25
26
C[3:0] = 03h
H0 = 2 high order bits of data byte 0
L0 = 2 low order bits of data byte 0
H1 = 2 high order bits of data byte 1
L1 = 2 low order bits of data byte 1
Figure 5. QUAD Read Sequence
CS
SIO[3:0]
04
3
25
16
9
810
711
SCK
A5
A0
12
14
13
C1
C0
A4
A3
A2
A1
H0
L0
H1
L1
H2
L2
H3
L3
MSB
MSB
Notes:
Instruction
24−bit address
Data out
X
X
15
16
C[1:0] = 03h
H0 = 4 high order bits of data byte 0
L0 = 4 low order bits of data byte 0
H1 = 4 high order bits of data byte 1
L1 = 4 low order bits of data byte 1
Write Operation
The serial SRAM WRITE is selected by enabling CS low.
First, the 8-bit WRITE instruction is transmitted to the
device followed by the 24-bit address with the 7 MSBs being
don’t care. After the WRITE instruction and addresses are
sent, the data to be stored in memory is shifted in on the SI
pin.
If operating in page mode, after the initial word of data is
shifted in, additional data words can be written as long as the
address requested is sequential on the same page. Simply
write the data on SI pin and continue to provide clock pulses.
The internal address pointer is automatically incremented to
the next higher address on the page after each word of data
is written in. This can be continued for the entire page length
of 32 words long. At the end of the page, the addresses
pointer will be wrapped to the 0 word address within the
page and the operation can be continuously looped over the
32 words of the same page. The new data will replace data
already stored in the memory locations.
If operating in burst mode, after the initial word of data is
shifted in, additional data words can be written to the next
sequential memory locations by continuing to provide clock
pulses. The internal address pointer is automatically
incremented to the next higher address after each word of
data is read out. This can be continued for the entire array
and when the highest address is reached, 1FFFFh, the
address counter wraps to the address 00000h. This allows
the burst write cycle to be continued indefinitely. Again, the
new data will replace data already stored in the memory
locations.
All WRITE operations are terminated by pulling CS high.


Số phần tương tự - N01S830BAT22ET

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