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ADS8325IDRBR bảng dữ liệu(PDF) 3 Page - Burr-Brown (TI) |
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ADS8325IDRBR bảng dữ liệu(HTML) 3 Page - Burr-Brown (TI) |
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3 / 21 page  ADS8325 3 SBAS226A www.ti.com ELECTRICAL CHARACTERISTICS: VDD = +5V Over recommended operating free-air temperature at –40 °C to +85°C, V REF = +5V, –IN = GND, fSAMPLE = 100kHz, and fCLK = 24 • fSAMPLE, unless otherwise noted. ADS8325I ADS8325IB PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS ANALOG INPUT Full-Scale Range FSR +IN – (–IN) 0 VREF ✻✻ V Operating Common-Mode Signal –0.3 0.5 ✻✻ V Input Resistance –IN = GND 5 ✻ G Ω Input Capacitance –IN = GND, During Sampling 45 ✻ pF Input Leakage Current –IN = GND ±50 ✻ nA Differential Input Capacitance +IN to –IN, During Sampling 20 ✻ pF Full-Power Bandwith FSBW fS Sinewave, SINAD at –3dB 20 ✻ kHz DC ACCURACY Resolution 16 ✻ Bits No Missing Code NMC 15 16 Bits Integral Linearity Error INL ±3 ±6 ±1.5 ±4LSB Offset Error VOS ±0.75 ±1.5 ±0.5 ±1mV Offset Error Drift TCVOS ±0.2 ✻ ppm/ °C Gain Error GERR ±24 ±12 LSB Gain Error Drift TCGERR ±0.3 ✻ ppm/ °C Noise 20 ✻ µVRMS Power-Supply Rejection 4.75V ≤ V DD ≤ 5.25 3 ✻ LSB SAMPLING DYNAMICS Conversion Time tCONV 24kHz < fCLK ≤ 2.4MHz 6.667 666.7 ✻✻ µs Acquisition Time tAQ fCLK = 2.4MHz 1.875 ✻ µs Throughout Rate 100 ✻ kSPS Clock Frequency 0.024 2.4 ✻✻ MHz AC ACCURACY Total Harmonic Distortion THD 5Vp-p Sinewave, at 1kHz –100 –106 dB Spurious-Free Dynamic Range SFDR 5Vp-p Sinewave, at 1kHz –100 –108 dB Signal-to-Noise Ratio SNR –90 –91 dB Signal-to-Noise + Distortion SINAD 5Vp-p Sinewave, at 1kHz –90 –91 dB Effective Number of Bits ENOB 14.6 14.7 Bits VOLTAGE REFERENCE INPUT Reference Voltage 2.5 VDD + 0.3 ✻✻ V Reference Input Resistance CS = GND, fSAMPLE = 0Hz 5 ✻ k Ω CS = VDD 5 ✻ G Ω Reference Input Capacitance 20 ✻ pF Reference Input Current 1 1.5 ✻✻ mA CS = VDD 0.1 ✻✻ µA DIGITAL INPUTS(1) Logic Family CMOS ✻ High-Level Input Voltage VIH 0.7 • VDD VDD + 0.3 ✻✻ V Low-Level Input Voltage VIL –0.3 0.3 • VDD ✻✻ V Input Current IIN VI = VDD or GND ±50 nA Input Capacitance CI 5 ✻ pF DIGITAL OUTPUTS(1) Logic Family CMOS ✻ High-Level Output Voltage VOH VDD = 4.5V, IOH = –100µA 4.44 ✻ V Low-Level Output Voltage VOL VDD = 4.5V, IOL = 100µA 0.5 ✻ V High-Impedance-State Output Current IOZ CS = VDD, VI = VDD or GND ±50 ✻ nA Output Capacitance CO 5 ✻ pF Load Capacitance CL 30 ✻ pF Data Format Straight Binary ✻ ✻ indicates the same specifications as the ADS8325I. NOTE: (1) Applies for 5.0V nominal supply: VDD (min) = 4.5V and VDD (max) = 5.5V. |
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