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IRF3007 bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRF3007 bảng dữ liệu(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G VDSS = 75V RDS(on) = 0.0126Ω ID = 75A Description 9/16/02 www.irf.com 1 ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Automotive [Q101] Qualified Features Typical Applications ● 42 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET TO-220AB IRF3007 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.74 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 80 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 56 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75 IDM Pulsed Drain Current 320 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 280 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 946 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in) Absolute Maximum Ratings PD -94424A |
Số phần tương tự - IRF3007 |
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Mô tả tương tự - IRF3007 |
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