© Semiconductor Components Industries, LLC, 2016

1

Publication Order Number :

September 2016 - Rev. 1

STK534U342C-E/D

www.onsemi.com

ORDERING INFORMATION

See detailed ordering and shipping information on page 15 of this data sheet.

STK534U342C-E

Intelligent Power Module (IPM)

600 V, 5 A

Overview

This “Inverter IPM” is highly integrated device containing all High Voltage

(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In

line Package). Output stage uses IGBT/FRD technology and implements Under

Voltage Protection (UVP). Internal Boost diodes are provided for high side gate

boost drive.

Function

 Single control power supply due to Internal bootstrap circuit for high side

pre-driver circuit

 All control input and status output are at low voltage levels directly compatible

with microcontrollers.

 Built-in cross conduction prevention.

 Externally accessible embedded thermistor for substrate temperature

measurement

Certification

 UL1557 (File number: E339285)

Specifications

Parameter

Symbol

Remarks

Ratings

Unit

Supply voltage

VCC

P to U-, V-, W-, surge < 500 V

*1

450

V

Collector-emitter voltage

VCE

P to U, V, W or U, V, W, to U-, V-, W-

600

V

Output current

Io

P,U-,V-,W-,U,V,W terminal current

±5

A

P,U-,V-,W-,U,V,W terminal current, Tc = 100

C

±3

A

Output peak current

Iop

P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms

±10

A

Pre-driver voltage

VD1,2,3,4

VB1 to U, VB2 to V, VB3 to W, VDD to VSS

*2

20

V

Input signal voltage

VIN

HIN1, 2, 3, LIN1, 2, 3

0.3 to VDD

V

FLTEN terminal voltage

VFLTEN

FLTEN terminal

0.3 to VDD

V

Maximum power dissipation

Pd

IGBT per 1 channel

27.7

W

Junction temperature

Tj

IGBT, FRD, Pre-Driver IC

150

C

Storage temperature

Tstg

40 to +125

C

Operating case temperature

Tc

IPM case

20 to +100

C

Tightening torque

A screw part

*3

0.9

Nm

Withstand voltage

Vis

50 Hz sine wave AC 1 minute

*4

2000

VRMS

Reference voltage is “VSS” terminal voltage unless otherwise specified.

*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.

*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.

*3: Flatness of the heat-sink should be 0.15 mm and below.

*4: Test conditions : AC 2500 V, 1 s.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.