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2 / 4 page NCP3712ASN, SZNCP3712ASN http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Input−to−Output Voltage Vio 105 V Reverse Input−to−Vz. Voltage Vin(rev) −9.0 V Reverse Input−to−Rboost Voltage Vin(rev) − 5.0 V Output Load Current − Continuous Iload −300 mA Enbl Input Current − Continuous Ienbl 5.0 mA Vz Input Current − Continuous Iz 3.0 mA Rboost Input Current − Continuous Iboost 10 mA Junction Temperature TJ 125 °C Operating Ambient Temperature Range TA − 40 to +85 °C Storage Temperature Range Tstg − 65 to +150 °C Device Power Dissipation (Minimum Footprint) PD 300 mW Derate Above 25 °C − 2.4 mW/ °C Latchup Performance: Positive Negative ILatchup 200 200 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015. Machine Model Method 150 V. Figure 2. Typical Applications Circuit for Load Dump Transient Protection NCP3712 ASN A+ A− 1N4004 FB* *FB = MMZ2012 Y601B FB* 0.01 mF TYP 0.027 mF TYP 18 V TYP Ropt Rload Enbl Iboost Rboost Ienbl IZ Vout Iload N.C. Vin VZ 1.0 k TYP Renbl 0−500 W KEY 3 1 2 6 5 4 Von Figure 3. Enable NOT Switching Waveforms Figure 4. Load Dump Waveforms 30 50 0 TIME ( ms) 15 10 TIME ( ms) 350 0 80 40 20 0 13.5 V SUPPLY RAIL 5 0 15 5 10 20 25 35 40 250 300 50 100 200 150 60 100 120 45 50% AMPLITUDE LOAD DEPENDENT EXP DECAY DEVICE OUTPUT VOLTAGE “ENABLE NOT” INPUT tpLH Voff 13.5 V SUPPLY RAIL TYPICAL INPUT TRANSIENT LOAD DEPENDENT OUTPUT EXP DECAY |
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