FSB50660SF datasheet(4/28 Pages) FAIRCHILD

tên linh kiện	FSB50660SF

Giải thích chi tiết về linh kiện	Motion SPM 5 Series Version 2 User?셲 Guide

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AN-9080

APPLICATION NOTE

www.fairchildsemi.com

Rev. 1.0.1 • 4/16/14

4

3.

Package

3.1. Internal Circuit Diagram

Major differences between Version 2 and previous

versions are red in the internal circuit diagram in Figure 2.

Though some old versions also have these features,

Version 2 widely adopts these features. Main differences

are Vts, internal connections between VS and sources of

high-side FRFETs, and internal bootstrap diodes. The Vts

pin is from V-phase HVIC only and sends out the

temperature sensing signal.

(1) COM

(2) V

B(U)

(3) V

CC(U)

(4) IN

(UH)

(5) IN

(UL)

(6) N.C

(7) V

B(V)

(8) V

CC(V)

(9) IN

(VH)

(10) IN

(VL)

(11) Vts

(12) V

B(W)

(13) V

CC(W)

(14) IN

(WH)

(15) IN

(WL)

(16)

(17) P

(18) U, V

S(U)

(19) N

U

(20) N

V

(21) V, V

S(V)

(22) N

W

(23) W, V

S(W)

COM

VCC

LIN

HIN

VB

HO

VS

LO

COM

VCC

LIN

HIN

VB

HO

VS

LO

Vts

COM

VCC

LIN

HIN

VB

HO

VS

LO

N.C

Figure 2. Internal Circuit Diagram of Motion SPM 5

Series Version 2 Products

3.2.

Pin Description

Figure 3 shows the locations of pins and the names of

double-DIP package. Note that Vb pins have longer leads to

accommodate further creepage distance on the PCB. Figure

4 in the later section illustrates the internal layout of the

module in more detail.

Figure 3. Pin Numbers and Names

Table 3. Pin Descriptions

Pin #

Name

Pin Description

1

COM

IC common supply ground

2

VB(U)

Bias voltage for U-phase high-side

MOSFET driving

3

VCC(U)

Bias voltage for U-phase IC and low-side

MOSFET driving

4

IN(UH)

Input for U-phase high-side gate signal

5

IN(UL)

Input for U-phase low-side gate signal

6

NC

No connection

7

VB(V)

Bias voltage for V-phase high-side

MOSFET driving

8

VCC(V)

Bias voltage for V-phase IC and low-side

MOSFET driving

9

IN(VH)

Input for V-phase high-side gate signal

10

IN(VL)

Input for V-phase low-side gate signal

11

VTS

Analog voltage output proportional to IC

temperature

12

VB(W)

Bias voltage for W-phase high-side

MOSFET driving

13

VCC(W)

Bias voltage for W-phase IC and low-side

MOSFET driving

14

IN(WH)

Input for W-phase high-side gate signal

15

IN(WL)

Input for W-phase low-side gate signal

16

NC

No connection

17

P

Positive DC-link input

18

U, VS(U)

Output for U-phase and bias voltage

ground for high-side FET driving

19

NU

Source of U-phase low-side MOSFET

20

NV

Source of V-phase low-side MOSFET

21

V, VS(V)

Output for V-phase and bias voltage

ground for high-side MOSFET driving

22

NW

Source of W-phase low-side MOSFET

23

W, VS(W)

Output for W-phase and bias voltage

ground for high-side MOSFET driving

High-Side Bias Voltage Pins for Driving the High-

Side MOSFET / High-Side Bias Voltage Ground

Pins for Driving the High-Side MOSFET

Pins: VB(U) – U,VS(U), VB(V) – V, VS(V), VB(W) – W, VS(W)



These are drive power supply pins for providing gate

drive power to the high-side MOSFETs.



The advantage of the bootstrap scheme is that no

separate external power supplies are required to drive

the high-side MOSFETs.



Each bootstrap capacitor is generally charged from the

VCC supply during the on-state of the corresponding

low-side MOSFET.

Số phần tương tự - FSB50660SF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Fairchild Semiconductor	FSB50660SF	866Kb / 11P	Motion SPMR 5 SuperFETR Series
ON Semiconductor	FSB50660SF	761Kb / 13P	Motion SPM 5 SuperFET Series April 2014 Rev. C6
Fairchild Semiconductor	FSB50660SFS	745Kb / 10P	Motion SPMR 5 SuperFETR Series
ON Semiconductor	FSB50660SFS	734Kb / 12P	Motion SPM 5 SuperFET Series Aug 2015 Rev. 1.1
Fairchild Semiconductor	FSB50660SFT	866Kb / 11P	Motion SPMR 5 SuperFETR Series

More results

Mô tả tương tự - FSB50660SF

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