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LM4667 bảng dữ liệu(PDF) 4 Page - National Semiconductor (TI) |
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LM4667 bảng dữ liệu(HTML) 4 Page - National Semiconductor (TI) |
4 / 16 page Electrical Characteristics V DD =3V (Notes 1, 2) The following specifications apply for V DD = 3V and RL =15µH+8 Ω + 15µH unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4667 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, No Load V IN = 0V, RL =15µH+8 Ω + 15µH 3.50 3.75 5.0 mA (max) I SD Shutdown Current V SD = GND (Note 9) 0.01 2.0 µA (max) V SDIH Shutdown Voltage Input High 1.0 1.4 V (min) V SDIL Shutdown Voltage Input Low 0.8 0.4 V (max) V GSIH Gain Select Input High 1.0 1.4 V (min) V GSIL Gain Select Input Low 0.8 0.4 V (max) A V Closed Loop Gain V Gain Select =VDD 6 5.5 6.5 dB (min) dB (max) A V Closed Loop Gain V Gain Select = GND 12 11.5 12.5 dB (min) dB (max) V OS Output Offset Voltage 10 25 mV (max) T WU Wake-up Time 5 ms P o Output Power THD = 1% (max); f = 1kHz 450 425 mW (min) THD+N Total Harmonic Distortion+Noise P O = 100mWRMS;fIN = 1kHz 0.35 % R IN Differential Input Resistance V Gain Select =VDD 90 k Ω V Gain Select = GND 60 k Ω PSRR Power Supply Rejection Ratio V ripple = 100mVRMS sine wave Inputs terminated to GND 56 (f = 217Hz) dB V Ripple = 100mVRMS sine wave P OUT = 10mW,1kHz 65 (f = 217Hz) dB CMRR Common Mode Rejection Ratio V Ripple = 100mVRMS, f Ripple = 217Hz 41 dB SNR Signal to Noise Ratio P O = 400mWRMS, A-Weighted Filter 83 dB e OUT Output Noise A-Weighted filter, V in = 0V 125 µV Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum allowable power dissipation is PDMAX =(TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4667, TJMAX = 150˚C. The typical θJA is 220˚C/W for the microSMD package and 190˚C/W for the MSOP package. Note 4: Human body model, 100pF discharged through a 1.5k Ω resistor. Note 5: Machine Model, 220pF–240pF discharged through all pins. Note 6: Typical specifications are specified at 25˚C and represent the parametric norm. Note 7: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Note 9: Shutdown current is measured in a normal room environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA. The Shutdown pin should be driven as close as possible to GND for minimal shutdown current and to VDD for the best THD performance in PLAY mode. See the Application Information section under SHUTDOWN FUNCTION for more information. External Components Description (Figure 1) Components Functional Description 1. C S Supply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing section for information concerning proper placement and selection of the supply bypass capacitor. 2. C I Input AC coupling capacitor which blocks the DC voltage at the amplifier’s input terminals. www.national.com 4 |
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