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FDC6036P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDC6036P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDC6036P Rev C2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source BreakdownVoltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.7 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4.4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –5.0 A VGS = –2.5 V, ID = –4.0 A VGS = –1.8 V, ID = –3.2 A VGS = –4.5 V,ID = –5 A,TJ=125°C 37 52 74 51 44 64 95 61 m Ω gfs Forward Transconductance VDS = –5 V, ID = –5 A 16 S Dynamic Characteristics Ciss Input Capacitance 992 pF Coss Output Capacitance 169 pF Crss Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V, f = 1.0 MHz 85 pF Rg Gate Resistance V GS = 15 mV f = 1.0 MHz 8.6 m Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 24 ns tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 40 64 ns tf Turn–Off Fall Time VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 20 36 ns Qg Total Gate Charge 10 14 nC Qgs Gate–Source Charge 1.7 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –5 A, VGS = –4.5 V 2.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.25 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A (Note 2) –0.7 –1.2 V trr Diode Reverse Recovery Time 19 ns Qrr Diode Reverse Recovery Charge IF = –5 A, diF/dt = 100 A/µs 7.8 nC |
Số phần tương tự - FDC6036P |
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Mô tả tương tự - FDC6036P |
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