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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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SS12T3 bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 4 page BSS123LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 mAdc) V(BR)DSS 100 − − Vdc Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C IDSS − − − − 15 60 mAdc Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS − − 50 nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 − 2.8 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) − 5.0 6.0 W Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) gfs 80 − − mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 20 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 9.0 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 4.0 − pF SWITCHING CHARACTERISTICS(4) Turn−On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, td(on) − 20 − ns Turn−Off Delay Time (VCC 30 Vdc, IC 0.28 Adc, VGS = 10 Vdc, RGS = 50 W) td(off) − 40 − ns REVERSE DIODE Diode Forward On−Voltage (ID = 0.34 Adc, VGS = 0 Vdc) VSD − − 1.3 V 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping† BSS123LT1 SOT−23 3,000 Tape & Reel BSS123LT1G SOT−23 (Pb−Free) 3,000 Tape & Reel BSS123LT3 SOT−23 10,000 Tape & Reel BSS123LT3G SOT−23 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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