công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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BYT54K bảng dữ liệu(PDF) 1 Page - Diode Semiconductor Korea |
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BYT54K bảng dữ liệu(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Fast recovery times The plastic material carries U/L recognition 94V-0 Glass passivated junction Low cost High surge current capability MECHANICAL DATA Case:JEDEC DO-- 41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave, 50 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 5 4B BYT 5 4D BYT 5 4G BYT 5 4J BYT 5 4K BYT 5 4M UNITS Maximum recurrent peak reverse voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 100 200 400 600 800 1000 V Maximum average forw ard rectified current 10mmlead length, @T A=75 Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=125 Maximum reverse recovery time (Note1) trr ns Typical thermal resistance (Note 2) RθJA k/W Operating junction temperature range TJ Storage temperature range T STG BYT54A(Z)--- BYT54M(Z) A IF(AV) HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.25 A DO - 41 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS A IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Thermal resistance from junction to ambient. A - 55 ---- + 1 75 - 55 ---- + 1 75 100 30 50 BYT 5 4A 35 50 1.25 1. 5 45 150 5.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
Số phần tương tự - BYT54K |
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Mô tả tương tự - BYT54K |
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