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BYT56A bảng dữ liệu(PDF) 1 Page - Diode Semiconductor Korea |
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BYT56A bảng dữ liệu(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 56B BYT 56D BYT 56G BYT 56J BYT 56K BYT 56M UNITS Maximum recurrent peak reverse voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG BYT56A(Z)--- BYT56M(Z) A Bevel round chip, aualanche operation IF(AV) HIGH EFFICIENCY ECTIFIERS VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A DO - 27 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3. Thermal resistance f rom junction to ambient. A IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 150 - 55 ---- + 150 100 150.0 50 BYT 56A 35 50 3.0 1.4 30 150.0 10.0 75 50 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
Số phần tương tự - BYT56A |
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Mô tả tương tự - BYT56A |
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