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1N5820 bảng dữ liệu(PDF) 1 Page - Diode Semiconductor Korea |
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1N5820 bảng dữ liệu(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202, method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0A (Note 1) @ 9.4A Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 1N5820--- 1N5822 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications IF(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 3.0 A DO - 27 The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1N5820 3.Thermal resistance junction to ambient mA IR IFSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A 20 - 55 ---- + 125 - 55 ---- + 150 80.0 250 3.0 20.0 2.0 40 0.525 0.95 0.50 VF V 0.90 0.475 0.85 1N5821 1N5822 40 28 30 21 30 20 14 20 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
Số phần tương tự - 1N5820 |
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Mô tả tương tự - 1N5820 |
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