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MTB020A03KV8-0-T6-G bảng dữ liệu(PDF) 2 Page - Cystech Electonics Corp. |
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MTB020A03KV8-0-T6-G bảng dữ liệu(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.06.13 Revised Date : Page No. : 2/9 MTB020A03KV8 CYStek Product Specification Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Breakdown Voltage BVDSS 30 Gate-Source Voltage VGS ± 16 V TA=25 °C, VGS=10V 6.6 Continuous Drain Current *2 TA=70 °C, VGS=10V IDSM 5.3 TC=25 °C, VGS=10V 12 Continuous Drain Current TC=100 °C, VGS=10V ID 7.6 Pulsed Drain Current * 3 IDM 48 A TA=25°C, Single device operation 1.5 *2 TA=70°C, Single device operation 0.96 *2 TA=25°C,Single device value at dual operation 1.24 *2 TA=70°C,Single device value at dual operation PDSM 0.79 *2 TC=25°C 5 Total Power Dissipation TC=100°C PD * 1 2 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Max. Thermal Resistance, Junction-to-ambient, single device operation 84 *2 Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Rth,j-a 101 *2 Max. Thermal Resistance, Junction-to-case Rth,j-c 25 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low duty cycles to keep initial TJ=25°C. N-Channel Electrical Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V, ID=250μA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±16V, VDS=0V - - 1 VDS=30V, VGS=0V IDSS - - 10 μA VDS=24V, VGS=0V, Tj=70 °C - 15.2 20 VGS=10V, ID=10A *RDS(ON) - 20.1 28 m Ω VGS=4.5V, ID=8A *GFS - 3.6 - S VDS=10V, ID=1A |
Số phần tương tự - MTB020A03KV8-0-T6-G |
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Mô tả tương tự - MTB020A03KV8-0-T6-G |
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