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LM556CM bảng dữ liệu(PDF) 4 Page - Texas Instruments

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LM556
SNAS549A – MARCH 2000 – REVISED OCTOBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
Supply voltage
18
V
LM556CM
410
Power dissipation(3)
mW
LM556CN
1620
Operating temperature, LM556C
0
70
°C
PDIP package soldering (10 seconds)
260
Soldering information
SOIC package vapor phase (60 seconds)
215
°C
SOIC package infrared (15 seconds)
220
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability
and specifications.
(3)
For operating at elevated temperatures the device must be derated based on a 150°C maximum junction temperature and a thermal
resistance of 77°C/W (Plastic Dip), and 110°C/W (SO-14 Narrow).
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±500
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Supply voltage
4.5
16
V
TA
Operating temperature
0
70
°C
6.4 Thermal Information
LM556
THERMAL METRIC(1)
D (SOIC)
NFF (PDIP)
UNIT
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
85.3
48.0
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
45.8
34.9
°C/W
RθJB
Junction-to-board thermal resistance
39.6
27.9
°C/W
ψJT
Junction-to-top characterization parameter
11.7
19.3
°C/W
ψJB
Junction-to-board characterization parameter
39.4
27.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: LM556


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