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LM556CM bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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4 / 20 page LM556 SNAS549A – MARCH 2000 – REVISED OCTOBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Supply voltage 18 V LM556CM 410 Power dissipation(3) mW LM556CN 1620 Operating temperature, LM556C 0 70 °C PDIP package soldering (10 seconds) 260 Soldering information SOIC package vapor phase (60 seconds) 215 °C SOIC package infrared (15 seconds) 220 Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (3) For operating at elevated temperatures the device must be derated based on a 150°C maximum junction temperature and a thermal resistance of 77°C/W (Plastic Dip), and 110°C/W (SO-14 Narrow). 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage 4.5 16 V TA Operating temperature 0 70 °C 6.4 Thermal Information LM556 THERMAL METRIC(1) D (SOIC) NFF (PDIP) UNIT 14 PINS 14 PINS RθJA Junction-to-ambient thermal resistance 85.3 48.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 45.8 34.9 °C/W RθJB Junction-to-board thermal resistance 39.6 27.9 °C/W ψJT Junction-to-top characterization parameter 11.7 19.3 °C/W ψJB Junction-to-board characterization parameter 39.4 27.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated Product Folder Links: LM556 |
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