IXYX25N250CV1HV datasheet(2/7 Pages) IXYS

tên linh kiện	IXYX25N250CV1HV

Giải thích chi tiết về linh kiện	Advance Technical Information

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nhà sản xuất	IXYS [IXYS Corporation]

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYX25N250CV1HV

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Reverse Sonic Diode (FRD)

Symbol Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

V

F

I

F = 25A, VGE = 0V, Note 1

3.5

V

T

J = 150°C

3.1

V

I

RM

36

A

t

rr

220

ns

R

thJC

0.32 °C/W

I

F = 25A, VGE = 0V, TJ = 150°C

-d

i

F/dt = 400A/sVR = 1200V

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE(Clamp), TJ or RG.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

g

fs

I

C = 25A, VCE = 10V, Note 1

16

27

S

R

Gi

Gate Input Resistance

2.8



C

ies

3060

pF

C

oes

V

CE = 25V, VGE = 0V, f = 1MHz

166

pF

C

res

43

pF

Q

g(on)

147

nC

Q

ge

I

C = 25A, VGE = 15V, VCE = 0.5 • VCES

16

nC

Q

gc

68

nC

t

d(on)

15

ns

t

ri

34

ns

E

on

8.3

mJ

t

d(off)

230

ns

t

fi

246

ns

E

off

7.3

mJ

t

d(on)

18

ns

t

ri

33

ns

E

on

11.0

mJ

t

d(off)

225

ns

t

fi

350

ns

E

off

10.5

mJ

R

thJC

0.16 °C/W

R

thCS

0.15

°C/W

Inductive load, T

J = 150°C

I

C = 25A, VGE = 15V

V

CE = 0.5 • VCES, RG = 5

Note 2

Inductive load, T

J = 25°C

I

C = 25A, VGE = 15V

V

CE = 0.5 • VCES, RG = 5

Note 2

TO-247PLUS-HV Outline

1 - Gate

2,4 - Emitter

3 - Collector

A

E1

D1

D2

E2

R

E

A2

A1

2X

A3

L1

D3

b

e

c

D

e1

E3

Q

b1

3X

4X

3X

1 2

3

4

Số phần tương tự - IXYX25N250CV1HV

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
IXYS Corporation	IXYX25N250CV1HV	252Kb / 8P	High Voltage XPT IGBT w/ Diode

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