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LM158AWGRLQMLV bảng dữ liệu(PDF) 9 Page - Texas Instruments

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LM158QML
www.ti.com
SNOSAP3F – JULY 2005 – REVISED MARCH 2013
SMD 5962–8771003 ELDRS Free Only
DC Drift Parameters (continued)
The following conditions apply, unless otherwise specified.
All voltages referenced to device ground.
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.
Sub-
Parameter
Test Conditions
Notes
Min
Max
Units
groups
±IIB
Input Bias Current
+VCC = 5V, VCM = 0V
See(1)
-10
10
nA
1
(1)
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
SMD 5962–8771003 ELDRS Free Only
100K Post Radiation Limits @ +25°C
(1)
DC Parameters
The following conditions apply, unless otherwise specified.
All voltages referenced to device ground.
Parameter
Test Conditions
Notes
Min
Max
Units
Sub -
groups
VIO
Input Offset Voltage
+VCC = 30V, VCM = 0V,
See(1)
-4.0
4.0
mV
1
RS = 50Ω, VO = 1.4V
+VCC = 30V, VCM = 28.5V,
See(1)
-4.0
4.0
mV
1
RS = 50Ω, VO = 1.4V
+VCC = 5V, VCM = 0V,
See(1)
-4.0
4.0
mV
1
RS = 50Ω, VO = 1.4V
±IIB
Input Bias Current
+VCC = 5V, VCM = 0V
See(1)(2)
-60
-1.0
nA
1
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post
Radiation Limits Table. These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a
wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS).
(2)
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
Copyright © 2005–2013, Texas Instruments Incorporated
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