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LM2574, LM2574HV
SNVS104D – JUNE 1999 – REVISED APRIL 2016
www.ti.com
Product Folder Links: LM2574 LM2574HV
Submit Documentation Feedback
Copyright © 1999–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Maximum supply voltage
LM2574
4.5
V
LM2574HV
63
ON/OFF pin input voltage
–0.3
VIN
V
Output voltage to ground, steady-state
–1
V
Power dissipation
Internally limited
Lead temperature, soldering (10 s)
260
°C
Maximum junction temperature
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage
LM2574
40
V
LM2574HV
60
TJ
Temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
The package thermal impedance is calculated in accordance with JESD 51-7.
(3)
Thermal resistances were simulated on a 4-layer, JEDEC board.
6.4 Thermal Information
THERMAL METRIC(1)(2)
LM2574, LM2574HV
UNIT
P (PDIP)
NPA (SOIC)
8 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance(3)
60.4
77.1
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
(3)
59.9
29.2
°C/W
RθJB
Junction-to-board thermal resistance(3)
37.9
33.3
°C/W
ψJT
Junction-to-top characterization parameter
17.1
2
°C/W
ψJB
Junction-to-board characterization parameter
37.7
32.8
°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance
(3)
°C/W


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