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ADS7821PB bảng dữ liệu(PDF) 3 Page - Texas Instruments |
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ADS7821PB bảng dữ liệu(HTML) 3 Page - Texas Instruments |
3 / 11 page 3 ® ADS7821 POWER SUPPLIES Specified Performance VDIG Must be ≤ V ANA +4.75 +5 +5.25 DD D V VANA +4.75 +5 +5.25 DD D V IDIG 0.3 D mA IANA 16 D mA Power Dissipation fS = 100kHz 100 D mW TEMPERATURE RANGE Specified Performance –25 +85 DD °C Derated Performance –55 +125 DD °C Storage –65 +150 DD °C Thermal Resistance ( θ JA) Plastic DIP 75 D °C/W SOIC 75 D °C/W NOTES: (1) LSB means Least Significant Bit. For the 16-bit, 0 to +5V input ADS721, one LSB is 76 µV. (2) Typical rms noise at worst case transitions and temperatures. (3) Adjustable to zero with external potentiometer as shown in Figure 6a. (4) Full scale error is the worst case of Full Scale untrimmed deviation from ideal last code transition divided by the transition voltage and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale input. (6) Full- Power Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input overvoltage. SPECIFICATIONS (CONT) ELECTRICAL TA = –25°C to +85°C, fS = 100kHz, VDIG = VANA = VD = +5V, using external reference, unless otherwise specified. ADS7821P, U ADS7821PB, UB PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS ABSOLUTE MAXIMUM RATINGS Analog Inputs: VIN ...................................................... –0.7V to VANA +0.3V REF ................................... AGND2 –0.3V to +VANA +0.3V CAP .......................................... Indefinite Short to AGND2, Momentary Short to VANA Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V VANA ....................................................................................................... 7V VDIG to VANA ..................................................................................... +0.3V VDIG ....................................................................................................... 7V Digital Inputs ............................................................ –0.3V to +VDIG +0.3V Maximum Junction Temperature ................................................... +165 °C Internal Power Dissipation ............................................................. 825mW Lead Temperature (soldering, 10s) ................................................ +300 °C PACKAGE INFORMATION PACKAGE DRAWING PRODUCT PACKAGE NUMBER(1) ADS7821P Plastic DIP 246 ADS7821PB Plastic DIP 246 ADS7821U SOIC 217 ADS7821UB SOIC 217 NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. MINIMUM SIGNAL-TO- MAXIMUM (NOISE + SPECIFICATION LINEARITY DISTORTION) TEMPERATURE PRODUCT ERROR (LSB) RATIO (dB) RANGE PACKAGE ADS7821P ±4 83 –25 °C to +85°C Plastic DIP ADS7821PB ±3 86 –25 °C to +85°C Plastic DIP ADS7821U ±4 83 –25 °C to +85°C SOIC ADS7821UB ±3 86 –25 °C to +85°C SOIC ORDERING INFORMATION ELECTROSTATIC DISCHARGE SENSITIVITY Electrostatic discharge can cause damage ranging from per- formance degradation to complete device failure. Burr- Brown Corporation recommends that all integrated circuits be handled and stored using appropriate ESD protection methods. ESD damage can range from subtle performance degrada- tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. |
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Mô tả tương tự - ADS7821PB |
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