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ADS820E bảng dữ liệu(PDF) 2 Page - Texas Instruments |
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ADS820E bảng dữ liệu(HTML) 2 Page - Texas Instruments |
2 / 20 page www.ti.com ADS820 2 SBAS037B SPECIFIED PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY ADS820 SO-8 DW –40 °C to +85°C ADS820U ADS820U Rails, 28 "" " " " ADS820U/1K Tape and Reel, 1000 ADS820U PARAMETER CONDITIONS TEMP MIN TYP MAX UNITS ELECTRICAL CHARACTERISTICS At TA = +25°C, VS = +5V, Sampling Rate = 20MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted. Resolution 10 Bits Specified Temperature Range TAMBIENT –40 +85 °C ANALOG INPUT Differential Full-Scale Input Range +1.25 +3.25 V Common-Mode Voltage 2.25 V Analog Input Bandwidth (–3dB) Small Signal –20dBFS(1) Input +25 °C 400 MHz Full Power 0dB Input +25 °C 65 MHz Input Impedance 1.25 || 4 M Ω || pF DIGITAL INPUT Logic Family TTL/HCT Compatible CMOS Convert Command Start Conversion Falling Edge ACCURACY(2) fS = 2.5MHz Gain Error +25 °C ±0.6 ±1.5 % Full ±1.0 ±2.5 % Gain Tempco ±85 ppm/ °C Power-Supply Rejection of Gain ∆ +V S = ±5% +25 °C 0.01 0.1 %FSR/% Input Offset Error Full ±2.1 ±3.0 % Power-Supply Rejection of Offset ∆ +V S = ±5% +25 °C 0.02 0.1 %FSR/% CONVERSION CHARACTERISTICS Sample Rate 10k 20M Sample/s Data Latency 6.5 Convert Cycle DYNAMIC CHARACTERISTICS Differential Linearity Error f = 500kHz +25 °C ±0.15 ±1.0 LSB Full ±0.15 ±1.0 LSB f = 10MHz +25 °C ±0.2 ±1.0 LSB Full ±0.2 ±1.0 LSB No Missing Codes Full Tested Integral Linearity Error at f = 500kHz Full ±0.5 ±2.0 LSB Spurious-Free Dynamic Range (SFDR) f = 500kHz (–1dBFS input) +25 °C 67 77 dBFS Full 64 74 dBFS f = 10MHz (–1dBFS input) +25 °C 59 63 dBFS Full 57 62 dBFS ABSOLUTE MAXIMUM RATINGS(1) +VS ....................................................................................................... +6V Analog Input ............................................................ 0V to (+VS + 300mV) Logic Input ............................................................... 0V to (+VS + 300mV) Case Temperature ......................................................................... +100 °C Junction Temperature .................................................................... +150 °C Storage Temperature .................................................................... +125 °C External Top Reference Voltage (REFT) ................................. +3.4V Max External Bottom Reference Voltage (REFB) ............................ +1.1V Min NOTES: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Texas Instru- ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1) NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. NOTE: (1) dBFS refers to dB below Full Scale. (2) Percentage accuracies are referred to the internal A/D Converter Full-Scale Range of 4Vp-p. (3) IMD is referred to the larger of the two input signals. If referred to the peak envelope signal ( ≈ 0dB), the intermodulation products will be 7dB lower. (4) Based on (SINAD – 1.76)/6.02. (5) No “rollover” of bits. |
Số phần tương tự - ADS820E |
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Mô tả tương tự - ADS820E |
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