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2SC1567 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor |
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2SC1567 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Power Transistors 1 Publication date: February 2003 SJD00092BED 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A ■ Features • High collector-emitter voltage (Base open) V CEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings T a = 25°C ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Parameter Symbol Rating Unit Collector-base voltage 2SC1567 VCBO 100 V (Emitter open) 2SC1567A 120 Collector-emitter voltage 2SC1567 VCEO 100 V (Base open) 2SC1567A 120 Emitter-base voltage (Collector open) VEBO 5V Collector current IC 0.5 A Peak collector current ICP 1A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SC1567 VCEO IC = 100 µA, IB = 0 100 V (Base open) 2SC1567A 120 Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 05 V Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 130 330 hFE2 VCE = 5 V, I C = 500 mA 50 100 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V Transition frequency fT VCB = 10 V, I E = −50 mA, f = 200 MHz 120 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF (Common base, input open circuited) 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 8.0 +0.5 –0.1 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1 Rank R S hFE1 130 to 220 185 to 330 |
Số phần tương tự - 2SC1567 |
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Mô tả tương tự - 2SC1567 |
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