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BY253 bảng dữ liệu(PDF) 1 Page - Diotec Semiconductor

tên linh kiện BY253
Giải thích chi tiết về linh kiện  Standard Recovery Rectifier Diodes
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nhà sản xuất  DIOTEC [Diotec Semiconductor]
Trang chủ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BY253 bảng dữ liệu(HTML) 1 Page - Diotec Semiconductor

  BY253 Datasheet HTML 1Page - Diotec Semiconductor BY253 Datasheet HTML 2Page - Diotec Semiconductor  
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BY251 ... BY255, BY1600 ... BY2000
BY251 ... BY255, BY1600 ... BY2000
Standard Recovery Rectifier Diodes
Gleichrichterdioden mit Standard-Sperrverzug
IFAV = 3 A
VF
< 1.1 V
Tjmax = 150°C
VRRM = 200...2000 V
IFSM = 100/110 A
trr
~ 1500 ns
Version 2015-11-04
~ DO-201
Dimensions - Maße [mm]
Typical Application
50/60 Hz Mains Rectification,
Power Supplies, Polarity Protection
Commercial grade 1)
Typische Anwendung
50/60 Hz Netzgleichrichtung,
Stromversorgungen, Verpolschutz
Standardausführung 1)
Features
VRRM up to 2000 V
HV version BY4...BY16 available
High forward surge current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheit
VRRM bis zu 2000 V
HV-Version BY4...BY16 erhältlich
High forward surge current
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
1700
Gegurtet in Ammo-Pack
Weight approx.
1.0 g
Gewicht ca.
Case material
UL94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BY251
200
200
BY252
400
400
BY253
600
600
BY254
800
800
BY255
1300
1300
BY1600
1600
1600
BY1800
1800
1800
BY2000
2000
2000
higher voltages see
höhere Spannungen siehe
BY4...BY16
4000...16000
4000...16000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
3 A 3)
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
IFRM
20 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
100/110 A
Rating for fusing, Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 4.5+0.1
-0.3


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