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1N4002S bảng dữ liệu(PDF) 1 Page - Taiwan Memory Technology |
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1 / 4 page CREAT BY ART - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A CJ pF RθJA °C/W TJ °C TSTG °C Document Number: DS_D1402005 Version: F15 A-405 Maximum reverse current @ rated VR TJ=25°C TJ=125°C 1.0 μA 15 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300 μs, 1% duty cycle IR 5 50 A Maximum instantaneous forward voltage (Note 1) @ 1 A VF V Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Typical junction capacitance (Note 2) Typical thermal resistance 50 Operating junction temperature range - 55 to +150 Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 1N 4004S 1N 4005S 1N 4006S 1N 4007S UNIT Maximum repetitive peak reverse voltage MECHANICAL DATA Case: A-405 Weight: 0.2g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL 1N 4001S 1N 4002S 1N 4003S 1N4001S - 1N4007S Taiwan Semiconductor 1A, 50V - 1000V Silicon Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
Số phần tương tự - 1N4002S |
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Mô tả tương tự - 1N4002S |
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