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BY251 bảng dữ liệu(PDF) 1 Page - Taiwan Memory Technology

tên linh kiện BY251
Giải thích chi tiết về linh kiện  3A, 200V - 800V Silicon Rectifiers
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nhà sản xuất  TMT [Taiwan Memory Technology]
Trang chủ  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

BY251 bảng dữ liệu(HTML) 1 Page - Taiwan Memory Technology

  BY251_16 Datasheet HTML 1Page - Taiwan Memory Technology BY251_16 Datasheet HTML 2Page - Taiwan Memory Technology BY251_16 Datasheet HTML 3Page - Taiwan Memory Technology BY251_16 Datasheet HTML 4Page - Taiwan Memory Technology  
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CREAT BY ART
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
200
400
600
800
V
VRMS
140
280
420
560
V
VDC
200
400
600
800
V
IF(AV)
A
CJ
pF
RθJA
°C/W
TJ
°C
TSTG
°C
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1406026
Version: D15
Operating junction temperature range
- 55 to +150
Storage temperature range
- 55 to +150
μA
100
Typical junction capacitance (Note 2)
40
IR
5
Typical thermal resistance
40
A
Maximum instantaneous forward voltage (Note 1)
@ 3 A
VF
1.0
V
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case:
DO-201AD
Weight:
1.2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
BY251
BY252
BY253
BY251 - BY254
3A, 200V - 800V Silicon Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Taiwan Semiconductor
BY254
UNIT
DO-201AD


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