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BY251 bảng dữ liệu(PDF) 1 Page - Taiwan Memory Technology |
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BY251 bảng dữ liệu(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 200 400 600 800 V VRMS 140 280 420 560 V VDC 200 400 600 800 V IF(AV) A CJ pF RθJA °C/W TJ °C TSTG °C Note1: Pulse Test with PW=300μs, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1406026 Version: D15 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 μA 100 Typical junction capacitance (Note 2) 40 IR 5 Typical thermal resistance 40 A Maximum instantaneous forward voltage (Note 1) @ 3 A VF 1.0 V Maximum reverse current @ rated VR TJ=25°C TJ=125°C Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Maximum repetitive peak reverse voltage MECHANICAL DATA Case: DO-201AD Weight: 1.2 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL BY251 BY252 BY253 BY251 - BY254 3A, 200V - 800V Silicon Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Taiwan Semiconductor BY254 UNIT DO-201AD |
Số phần tương tự - BY251_16 |
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Mô tả tương tự - BY251_16 |
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