MCP6N11 datasheet(7/50 Pages) MICROCHIP

tên linh kiện	MCP6N11

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DS25073A-page 7

MCP6N11

TABLE 1-3:

DIGITAL ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = 1.8V to 5.5V, VSS = GND, EN/CAL =VDD,

VCM = VDD/2, VDM =0V, VREF =VDD/2, VL =VDD/2, RL =10kΩ to VL, CL = 60 pF and GDM =GMIN;

see Figure 1-6 and Figure 1-7.

Parameters

Sym

Min

Typ

Max

Units GMIN

Conditions

EN/CAL Low Specifications

EN/CAL Logic

Threshold, Low

VIL

VSS

—0.2 VDD

Vall

EN/CAL Input Current,

Low

IENL

—

-0.1

—

nA

EN/CAL = 0V

GND Current

ISS

-7

-2.5

—

µA

EN/CAL = 0V, VDD =5.5V

Amplifier Output Leakage IO(LEAK)

—

10

—

nA

EN/CAL = 0V

EN/CAL High Specifications

EN/CAL Logic

Threshold, High

VIH

0.8 VDD

VDD

Vall

EN/CAL Input Current,

High

IENH

—

-0.01

—

nA

EN/CAL = VDD

EN/CAL Dynamic Specifications

EN/CAL Input Hysteresis

VHYST

—

0.2

—

Vall

EN/CAL Low to Amplifier

Output High-Z Turn-off

Time

tOFF

—

3

10

µs

EN/CAL = 0.2VDD to VOUT = 0.1(VDD/2),

VDMGDM = 1 V, VL =0V

EN/CAL High to

Amplifier Output

On Time

tON

12

20

28

ms

EN/CAL = 0.8VDD to VOUT = 0.9(VDD/2),

VDMGDM = 1 V, VL =0V

EN/CAL Low to

EN/CAL High low time

tENLH

100

—

µs

Minimum time before externally

releasing EN/CAL (Note 1)

Amplifier On to

EN/CAL Low Setup Time

tENOL

—100

—

µs

POR Dynamic Specifications

VDD ↓ to Output Off

tPHL

—10

—

µs

all

VL =0V, VDD = 1.8V to

VPRL –0.1V step,

90% of VOUT change

VDD ↑ to Output On

tPLH

140

250

360

ms

VL =0V, VDD = 0V to VPRH +0.1V step,

90% of VOUT change

Note 1:

For design guidance only; not tested.

TABLE 1-4:

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = 1.8V to 5.5V, VSS = GND.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

TA

-40

—

+125

°C

Operating Temperature Range

TA

-40

—

+125

°C

(Note 1)

Storage Temperature Range

TA

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8L-SOIC

θJA

—150

—

°C/W

Thermal Resistance, 8L-TDFN (2×3)

θJA

—53—

°C/W

Note 1:

Operation must not cause TJ to exceed the Absolute Maximum Junction Temperature specification (+150°C).

Số phần tương tự - MCP6N11

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microchip Technology	MCP6N11-001	5Mb / 50P	500 kHz, 800 關A Instrumentation Amplifier 08/02/11
	MCP6N11-002	5Mb / 50P	500 kHz, 800 關A Instrumentation Amplifier 08/02/11
	MCP6N11-005	5Mb / 50P	500 kHz, 800 關A Instrumentation Amplifier 08/02/11
	MCP6N11-005E	5Mb / 50P	500 kHz, 800 關A Instrumentation Amplifier 08/02/11
	MCP6N11-010	5Mb / 50P	500 kHz, 800 關A Instrumentation Amplifier 08/02/11

More results

Mô tả tương tự - MCP6N11

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	OA1NP	864Kb / 31P	Rail-to-rail input and output March 2014 Rev 2
Microchip Technology	MCP6N16	7Mb / 58P	Rail-to-Rail Input and Output 03/25/14
Diodes Incorporated	APX321	670Kb / 18P	LOW VOLTAGE, RAIL-TO-RAIL INPUT AND OUTPUT APX324 Rev. 13
Linear Technology	LTC6800	1Mb / 14P	Rail-to-Rail, Input and Output, Instrumentation Amplifier
Analog Devices	OP184	508Kb / 24P	Precision Rail-to-Rail Input and Output Operational Amplifiers REV. D
National Semiconductor ...	LMC6492	705Kb / 18P	CMOS Rail-to-Rail Input and Output Operational Amplifier
Linear Technology	LT1218	327Kb / 16P	Precision Rail-to-Rail Input and Output Op Amps
Analog Devices	OP196	287Kb / 16P	Micropower, Rail-to-Rail Input and Output Operational Amplifiers REV. C
Analog Devices	OP284	676Kb / 24P	Precision Rail-to-Rail Input and Output Operational Amplifiers
National Semiconductor ...	LMC6681	750Kb / 24P	Low Voltage, Rail-To-Rail Input and Output CMOS

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