ST16N10 datasheet(1/6 Pages) STANSON

tên linh kiện	ST16N10

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ST16N10

N Channel Enhancement Mode MOSFET

12.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST16N10 2009. V1

DESCRIPTION

ST16N10 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The ST12N10D

has been designed specially to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM controllers. It has been

optimized for low gate charge, low RDS(ON) and fast switching speed.

PIN CONFIGURATION

TO-252

PART MARKING

Y: Year Code

A: Date Code

B: Wafer Code

FEATURE

l

100V/12.0A, RDS(ON) = 160mΩ（Typ）

@VGS = 10V

l

Super high density cell design for

extremely low RDS(ON)

l

Exceptional on-resistance and

maximum DC current capability

l

TO-252 Package design

Số phần tương tự - ST16N10

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
VBsemi Electronics Co.,...	ST16N10	1,008Kb / 7P	N-Channel 100 V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	ST16N10	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	ST04N20D	862Kb / 7P	TO-252 package design
	ST18N10D	619Kb / 6P	TO-252 Package design
	ST25N10	866Kb / 6P	TO-252 package design
Foshan Blue Rocket Elec...	MBRD1040	666Kb / 6P	TO-252 Plastic package Schottky diode
Foshan Blue Rocket Elec...	MBRD2045CT	710Kb / 6P	TO-252 Plastic package Schottky diode
Continental Device Indi...	TO-252	240Kb / 5P	TO-252 (DPAK) SMD Plastic Package
Foshan Blue Rocket Elec...	BTB08D	1Mb / 8P	Triac in a TO-252 Plastic Package
Cystech Electonics Corp...	MTA55N20J3	397Kb / 9P	TO-252
Foshan Blue Rocket Elec...	LV10100DCT	721Kb / 6P	Schottky Diode in a TO-252 Plastic Package
Foshan Blue Rocket Elec...	78M05	771Kb / 6P	Voltage Regulator in a TO-252 Plastic Package