1SV229_14 datasheet(1/3 Pages) TOSHIBA

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1SV229

2014-03-01

1

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV229

VCO for UHF Band Radio

• Ultra low series resistance: rs = 0.2 Ω (typ.)

• Useful for small size set

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

VR

15

V

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 μA

15

⎯

V

Reverse current

IR

VR = 15 V

⎯

3

nA

Capacitance

C2V

VR = 2 V, f = 1 MHz

14

15

16

pF

Capacitance

C10V

VR = 10 V, f = 1 MHz

5.5

6

6.5

pF

Capacitance ratio

C2V / C10V

⎯

2.0

2.5

⎯

Series resistance

rs

VR = 5 V, f = 470 MHz

⎯

0.2

0.4

Ω

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Start of commercial production

1988-06

Số phần tương tự - 1SV229_14

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