1SS405_14 datasheet(1/3 Pages) TOSHIBA

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1SS405

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS405

High Speed Switching Application

Low forward voltage

: VF (3) = 0.50V (typ.)

Low reverse current

: IR= 0.5μA (max)

Small total capacitance

: CT = 3.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

VRM

25

V

Reverse voltage

VR

20

V

Maximum (peak) forward current

IFM

100

mA

Average forward current

IO

50

mA

Surge current (10ms)

IFSM

1

A

Power dissipation

P *

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*:

Mounted on a glass epoxy circuit board of 20 × 20 mm,

pad dimension of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

VF (1)

―

IF = 1mA

―

0.33

―

VF (2)

―

IF = 5mA

―

0.38

―

Forward voltage

VF (3)

―

IF = 50mA

―

0.50

0.55

V

Reverse current

IR

―

VR = 20V

―

0.5

μA

Total capacitance

CT

―

VR = 0, f = 1MHz

―

3.9

―

pF

Equivalent Circuit (Top View)

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1G1A

Weight: 1.4mg(Typ.)

Unit: mm

A7

Start of commercial production

2001-09

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