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1SS427 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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1SS427 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor

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1SS427
2
3.
3.
3.
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
PD
IFSM
Tj
Tstg
Note
(Note 1)
(Note 2)
Rating
85
80
200
100
150
1
150
-55 to 150
Unit
V
mA
mW
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min
Typ.
0.62
0.75
0.98
0.3
1.6
Max
1.20
0.1
0.5
Unit
V
µA
pF
ns
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (trr
rr
rr
rr
) Test circuit
) Test circuit
) Test circuit
) Test circuit
2014-07-08
Rev.3.0


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