công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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1SS427 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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1SS427 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page 1SS427 2 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Peak reverse voltage Reverse voltage Peak forward current Average rectified current Power dissipation Non-repetitive peak forward surge current Junction temperature Storage temperature Symbol VRM VR IFM IO PD IFSM Tj Tstg Note (Note 1) (Note 2) Rating 85 80 200 100 150 1 150 -55 to 150 Unit V mA mW A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Measured with a 10 ms pulse. 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF(1) VF(2) VF(3) IR(1) IR(2) Ct trr Test Condition IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA See Fig. 5.1. Min Typ. 0.62 0.75 0.98 0.3 1.6 Max 1.20 0.1 0.5 Unit V µA pF ns Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Reverse recovery time (t Reverse recovery time (t Reverse recovery time (t Reverse recovery time (trr rr rr rr ) Test circuit ) Test circuit ) Test circuit ) Test circuit 2014-07-08 Rev.3.0 |
Số phần tương tự - 1SS427_14 |
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Mô tả tương tự - 1SS427_14 |
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