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STW9B12B-NZ bảng dữ liệu(PDF) 3 Page - Seoul Semiconductor

tên linh kiện STW9B12B-NZ
Giải thích chi tiết về linh kiện  Achieving the best system cost in Mid Power
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nhà sản xuất  SEOUL [Seoul Semiconductor]
Trang chủ  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

STW9B12B-NZ bảng dữ liệu(HTML) 3 Page - Seoul Semiconductor

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Rev1.0, Oct 23, 2015
www.seoulsemicon.com
Product Data Sheet
STW8B12B-NZ
– Mid-Power LED
 “제품 명 – 제품 군” 을 기입하십시오.
제품 군은 홈페이지 응용분야 분류기준을 참고한다.
(예) SZ5M0WWC9 – High-power LED
3
Font 글씨체
표(Table) - 제목: Arial 10pt, 표 내부: Arial 8pt, 본문(Body)
– Arial 9pt
 Revision numbering 기준:
• 가스펙은 0.0 부터 시작 0.x….
• Final 승인원: 1.0 부터 시작
• 기존에서 일부 수정: +0.1
• 새로운 Data 추가 /또는 기존 것 삭제: +1.0
 수정일자 표기형식; YYYY-MM-DD
(예) 2013-04-01
Performance Characteristics
 전기적 특성 및 광 특성 스펙 테이블
Table 2. Characteristics, I
F=60mA, Tj = 25ºC, RH30%
Notes :
Parameter
Symbol
Value
Unit
Min.
Typ.
Max.
Forward Current
I
F
-
60
80
mA
Forward Voltage[1]
V
F
2.9
-
3.3
V
Luminous Intensity[1]
(3,700~4,200 K)
Iv
-
6.1
(18.3)
-
cd
(lm)
Luminous Intensity[1]
(2,600~3,700 K)
Iv
-
5.5
(16.5)
-
cd
(lm)
CRI [1]
R
a
90
-
-
Viewing Angle[2]
2
Θ
1/2
-
120
-
Deg.
Thermal resistance (J to S) [3]
J-S
-
40
-
℃/W
ESD Sensitivity(HBM)
-
Class 2 JESD22-A114-E
Table 3. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Forward Current
I
F
80
mA
Power Dissipation
P
D
0.264
W
Junction Temperature
T
j
125
ºC
Operating Temperature
T
opr
-40 ~ + 100
ºC
Storage Temperature
T
stg
-40 ~ + 100
ºC
(1) Tolerance : VF :±0.2V, IV :±7%, Ra :±2, x,y :±0.005
(2) 2Θ
1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity
(3) Thermal resistance : Rth
JS (Junction / solder)
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
All measurements were made under the standardized environment of Seoul Semiconductor.


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