1999 May 14

2

NXP Semiconductors

Product specification

N-channel dual-gate MOS-FETs

BF1101; BF1101R;

BF1101WR

FEATURES

 Short channel transistor with high

forward transfer admittance to input

capacitance ratio

 Low noise gain controlled amplifier

up to 1 GHz

 Partly internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

 VHF and UHF applications with

3 to 7 V supply voltage, such as

television tuners and professional

communications equipment.

DESCRIPTION

Enhancement type N-channel

field-effect transistor with source and

substrate interconnected. Integrated

diodes between gates and source

protect against excessive input

voltage surges. The BF1101,

BF1101R and BF1101WR are

encapsulated in the SOT143B,

SOT143R and SOT343R plastic

packages respectively.

PINNING

PIN

DESCRIPTION

1source

2drain

3

gate 2

4

gate 1

Fig.1

Simplified outline

(SOT143B).

BF1101 marking code: NDp.

handbook, 2 columns

Top view

MSB014

12

3

4

Fig.2

Simplified outline

(SOT143R).

BF1101R marking code: NCp.

handbook, 2 columns

Top view

MSB035

1

2

4

3

Fig.3

Simplified outline

(SOT343R).

BF1101WR marking code: NC.

, halfpage

Top view

MSB842

21

4

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage



7V

drain current



30

mA

total power dissipation



200

mW

y

forward transfer admittance

25

30



mS

input capacitance at gate 1



2.2

2.7

pF

reverse transfer capacitance

f = 1 MHz



25

35

fF

F

noise figure

f = 800 MHz



1.7

2.5

dB

cross-modulation

input level for k = 1% at

40 dB AGC

100



dB

V

operating junction temperature



150

C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling.