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FSB44104A bảng dữ liệu(PDF) 6 Page - Fairchild Semiconductor |
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FSB44104A bảng dữ liệu(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page ©2013 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FSB44104A Rev. C0 Electrical Characteristics (TJ = 25°C, unless otherwise specified.) Inverter Part 1st Notes: 2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET. VPN should be sufficiently lees than this vale considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of MOSFET itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain - Source Breakdown Voltage VIN = 0 V, ID = 250 A (2nd Notes 1) 40 - - V RDS(ON) Drain - Source Turn-On Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 40 A - 3.0 4.1 m VSD Source - Drain Diode Forward Voltage VCC = VBS = 15 V, VIN = 0 V, ISD = 40 A - 0.8 1.1 V tON Switching Characteristic VPN = 20 V, VCC = VBS = 15 V, ID = 40 A, VIN = 0 V 5 V, High-side, Inductive Load (1st Note 3) - 1200 - ns tC(ON) - 1140 - ns tOFF - 1700 - ns tC(OFF) - 500 - ns trr -70 - ns Irr -5 - A tON VPN = 20 V, VCC = VBS = 15 V, ID = 40 A, VIN = 0 V 5 V, Low side, Inductive Load (1st Note 3) - 1370 - ns tC(ON) - 1000 - ns tOFF - 1850 - ns tC(OFF) - 600 - ns trr -75 - ns Irr -4 - A IDSS Drain - Source Leakage Current VDS = VDSS -- 250 A VDS ID VIN tON tC(ON) 10% ID 10% VDS 90% ID 100% ID trr 100% ID VDS ID VIN tOFF tC(OFF) 10% VDS 10% ID (a) turn-on (b) turn-off |
Số phần tương tự - FSB44104A |
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Mô tả tương tự - FSB44104A |
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