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MCR12DSN-001 bảng dữ liệu(PDF) 2 Page - Kersemi Electronic Co., Ltd.

tên linh kiện MCR12DSN-001
Giải thích chi tiết về linh kiện  Silicon Controlled Rectifiers
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nhà sản xuất  KERSEMI [Kersemi Electronic Co., Ltd.]
Trang chủ  http://www.kersemi.com
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MCR12DSN-001 bảng dữ liệu(HTML) 2 Page - Kersemi Electronic Co., Ltd.

  MCR12DSN-001 Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 6Page - Kersemi Electronic Co., Ltd. MCR12DSN-001 Datasheet HTML 7Page - Kersemi Electronic Co., Ltd.  
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MCR12DSM, MCR12DSN
www.kersemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3)
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 KW)TJ = 25°C
TJ = 110°C
IDRM,
IRRM
10
500
mA
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 mA)
VGRM
10
12.5
18
V
Peak Reverse Gate Blocking Current, (VGR = 10 V)
IGRM
1.2
mA
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
VTM
1.3
1.9
V
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
IGT
5.0
12
200
300
mA
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
TJ = 110°C
VGT
0.45
0.2
0.65
1.0
1.5
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
TJ = 25°C
TJ = −40°C
IH
0.5
1.0
6.0
10
mA
Latching Current
(VD = 12 V, IG = 2.0 mA)
TJ = 25°C
TJ = −40°C
IL
0.5
1.0
6.0
10
mA
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms)
tgt
2.0
5.0
ms
DYNAMIC CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 KW, TJ = 110°C)
dv/dt
2.0
10
V/
ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8
″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width
≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MCR12DSMT4
DPAK
369C
16 mm Tape & Reel (2.5 k / Reel)
MCR12DSMT4G
DPAK
(Pb−Free)
369C
16 mm Tape & Reel (2.5 k / Reel)
MCR12DSN−001
DPAK−3
369D
75 Units / Rail
MCR12DSNT4
DPAK
369C
16 mm Tape & Reel (2.5 k / Reel)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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