công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

MCR8DSNT4 bảng dữ liệu(PDF) 2 Page - Kersemi Electronic Co., Ltd.

tên linh kiện MCR8DSNT4
Giải thích chi tiết về linh kiện  Silicon Controlled Rectifiers
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  KERSEMI [Kersemi Electronic Co., Ltd.]
Trang chủ  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

MCR8DSNT4 bảng dữ liệu(HTML) 2 Page - Kersemi Electronic Co., Ltd.

  MCR8DSNT4 Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. MCR8DSNT4 Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. MCR8DSNT4 Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. MCR8DSNT4 Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. MCR8DSNT4 Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. MCR8DSNT4 Datasheet HTML 6Page - Kersemi Electronic Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
MCR8DSM, MCR8DSN
www.kersemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1.0 kW) (Note 3)
TJ = 25°C
TJ = 110°C
IDRM
IRRM
10
500
mA
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage
(IGR = 10 mA)
VGRM
10
12.5
18
V
Peak Reverse Gate Blocking Current
(VGR = 10 V)
IRGM
1.2
mA
Peak Forward On−State Voltage (Note 4)
(ITM = 16 A)
VTM
1.4
1.8
V
Gate Trigger Current (Continuous dc) (Note 5)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
IGT
5.0
12
200
300
mA
Gate Trigger Voltage (Continuous dc) (Note 5)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
TJ = 110°C
VGT
0.45
0.2
0.65
1.0
1.5
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
TJ = 25°C
TJ = −40°C
IH
0.5
1.0
6.0
10
mA
Latching Current
(VD = 12 V, IG = 2.0 mA)
TJ = 25°C
TJ = −40°C
IL
0.5
1.0
6.0
10
mA
Total Turn−On Time
(Source Voltage = 12 V, RS = 6.0 kW, IT = 16 A(pk), RGK = 1.0 kW)
(VD = Rated VDRM, Rise Time = 20kns, Pulse Width = 10 ms)
tgt
2.0
5.0
ms
DYNAMIC CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 kW, TJ = 110°C)
dv/dt
2.0
10
V/
ms
2. Surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test; Pulse Width
≤ 2.0 msec, Duty Cycle ≤ 2%.
5. RGK current not included in measurements.
ORDERING INFORMATION
Device
Package
Shipping
MCR8DSMT4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
MCR8DSMT4G
DPAK
(Pb−Free)
16 mm Tape & Reel (2.5 k / Reel)
MCR8DSNT4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


Số phần tương tự - MCR8DSNT4

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
ON Semiconductor
MCR8DSNT4 ONSEMI-MCR8DSNT4 Datasheet
67Kb / 6P
   Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
November, 2005 ??Rev. 4
logo
Kersemi Electronic Co.,...
MCR8DSNT4 KERSEMI-MCR8DSNT4 Datasheet
447Kb / 6P
   Silicon Controlled Rectifiers
logo
ON Semiconductor
MCR8DSNT4G ONSEMI-MCR8DSNT4G Datasheet
67Kb / 6P
   Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
November, 2005 ??Rev. 4
More results

Mô tả tương tự - MCR8DSNT4

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Motorola, Inc
C122A1 MOTOROLA-C122A1 Datasheet
65Kb / 3P
   SILICON CONTROLLED RECTIFIERS
logo
Power Innovations Ltd
TIC106 POINN-TIC106 Datasheet
165Kb / 8P
   SILICON CONTROLLED RECTIFIERS
TICP106 POINN-TICP106 Datasheet
95Kb / 6P
   SILICON CONTROLLED RECTIFIERS
logo
ON Semiconductor
MCR12D ONSEMI-MCR12D Datasheet
92Kb / 8P
   Silicon Controlled Rectifiers
December, 1999 ??Rev. 2
logo
Transys Electronics
SC12 TRSYS-SC12 Datasheet
765Kb / 5P
   SILICON CONTROLLED RECTIFIERS
logo
ON Semiconductor
2N6504 ONSEMI-2N6504 Datasheet
50Kb / 8P
   Silicon Controlled Rectifiers
April, 2001 ??Rev. 4
logo
Motorola, Inc
MCR102 MOTOROLA-MCR102 Datasheet
79Kb / 4P
   Silicon Controlled Rectifiers
MCR22 MOTOROLA-MCR22 Datasheet
101Kb / 6P
   Silicon Controlled Rectifiers
MCR25 MOTOROLA-MCR25 Datasheet
431Kb / 6P
   Silicon Controlled Rectifiers
MCR310 MOTOROLA-MCR310 Datasheet
86Kb / 4P
   Silicon Controlled Rectifiers
logo
NTE Electronics
NTE5550 NTE-NTE5550 Datasheet
20Kb / 2P
   Silicon Controlled Rectifiers
More results


Html Pages

1 2 3 4 5 6


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com