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Electrical characteristics
STW88N65M5-4
4/13
Doc ID 027754 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0 V
650
V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 650 V
1
µA
VGS =0 V, VDS =650 V,
TC =125 °C
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ± 25 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 42 A
0.024
0.029
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
8825
-
pF
Coss
Output capacitance
-
223
-
Crss
Reverse transfer
capacitance
-11
-
Co(tr)
(1)
1.
Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
Equivalent
capacitance time
related
VGS = 0 V, VDS = 0 to 520 V
-
778
-
pF
Co(er)
(2)
2.
Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
Equivalent
capacitance energy
related
-
202
-
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.79
-
Qg
Total gate charge
VDD = 520 V, ID = 42 A,
VGS = 10 V
(see Figure 16)
-
204
-
nC
Qgs
Gate-source charge
-
51
-
Qgd
Gate-drain charge
-
84
-


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