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1 / 12 page July 2015 DocID028101 Rev 1 1/12 This is information on a product in full production. www.st.com STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A Power MOSFET MDmesh™ DM2 in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW50N65DM2AG 650 V 0.087 Ω 38 A 300 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW50N65DM2AG 50N65DM2 TO-247 Tube TO-247 1 2 3 |
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