STP27N60M2-EP datasheet(1/16 Pages) STMICROELECTRONICS

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December 2015

DocID028723 Rev 1

1/16

This is information on a product in full production.

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STP27N60M2-EP,

STW27N60M2-EP

N-

channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP

Power MOSFETs in TO-220 and TO-247 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

V DS

RDS(on) max

ID

STP27N60M2-EP

600 V

0.163 Ω

20 A

STW27N60M2-EP

600 V

0.163 Ω

20 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



Very low turn-off switching losses



100% avalanche tested



Zener-protected

Applications



Switching applications



Tailored for very high frequency converters

(f > 150 kHz)

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 EP enhanced

performance technology. Thanks to their strip

layout and an improved vertical structure, these

devices exhibit low on-resistance, optimized

switching characteristics with very low turn-off

switching losses, rendering them suitable for the

most demanding very high frequency converters.

Table 1: Device summary

Order code

Marking

Package

Packaging

STP27N60M2-EP

27N60M2EP

TO-220

Tube

STW27N60M2-EP

TO-247

1

2

3

TO-247

1

2

3

TAB

TO-220

Số phần tương tự - STP27N60M2-EP

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