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Electrical characteristics
STL25N60M2-EP
4/16
DocID027254 Rev 3
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C
100
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 8 A
0.184
0.205
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz,
VGS = 0 V
-
1090
-
pF
Coss
Output capacitance
-
56
-
pF
Crss
Reverse transfer capacitance
-
1.6
-
pF
Coss eq.
(1)
Equivalent output capacitance
VDS = 0 to 480 V,
VGS = 0 V
-
255
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
7
-
Qg
Total gate charge
VDD = 480 V, ID = 18 A,
VGS = 10 V (see Figure
16: "Gate charge test
circuit")
-
29
-
nC
Qgs
Gate-source charge
-
6
-
nC
Qgd
Gate-drain charge
-
12
-
nC
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7: Switching Energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
E(off)
Turn-off energy
(from 90% VGS to 0% ID)
VDD = 400 V, ID = 2 A
RG = 4.7 Ω, VGS = 10 V
-
7
-
µJ
VDD = 400 V, ID = 4 A
RG = 4.7 Ω, VGS = 10 V
-
8
-
µJ


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