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STW22N95K5 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Electrical characteristics
STW22N95K5
4/14
DocID025115 Rev 3
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
950
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 950 V,
1
μA
V
DS
= 950 V, Tc=125 °C
50
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±10
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 μA3
4
5
V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 9 A
0.280
0.330
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-1550
-
pF
C
oss
Output capacitance
-
140
-
pF
C
rss
Reverse transfer
capacitance
-1
-
pF
C
o(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related
V
GS
= 0, V
DS
= 0 to 760 V
-178
-
pF
C
o(er)
(2)
2.
energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy related
-65
-
pF
R
G
Intrinsic gate resistance
f = 1MHz open drain
-
3.5
-
Ω
Q
g
Total gate charge
V
DD
= 760 V, I
D
= 17.5 A
V
GS
=10 V
(see Figure 16)
-48
-
nC
Q
gs
Gate-source charge
-
9
-
nC
Q
gd
Gate-drain charge
-
32.5
-
nC


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