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4 / 14 page Electrical characteristics STW22N95K5 4/14 DocID025115 Rev 3 2 Electrical characteristics (T CASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 950 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 950 V, 1 μA V DS = 950 V, Tc=125 °C 50 μA I GSS Gate body leakage current (V DS = 0) V GS = ± 20 V ±10 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 100 μA3 4 5 V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 9 A 0.280 0.330 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =100 V, f=1 MHz, V GS =0 -1550 - pF C oss Output capacitance - 140 - pF C rss Reverse transfer capacitance -1 - pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V GS = 0, V DS = 0 to 760 V -178 - pF C o(er) (2) 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -65 - pF R G Intrinsic gate resistance f = 1MHz open drain - 3.5 - Ω Q g Total gate charge V DD = 760 V, I D = 17.5 A V GS =10 V (see Figure 16) -48 - nC Q gs Gate-source charge - 9 - nC Q gd Gate-drain charge - 32.5 - nC |
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