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1 / 13 page This is information on a product in full production. October 2013 DocID024392 Rev 2 1/13 13 STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TO-247 1 2 3 Order code VDS (@Tjmax) RDS(on) max. ID PTOT STW19NM60N 650 V 0.285 Ω 13 A 110 W Table 1. Device summary Order codes Marking Package Packaging STW19NM60N 19NM60N TO-247 Tube www.st.com |
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