STPSC6TH13TI datasheet(3/8 Pages) STMICROELECTRONICS

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STPSC6TH13TI

Characteristics

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Total capacitive charge

VR = 400 V

18

nC

Cj

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

300

pF

VR = 400 V, Tc = 25 °C, F = 1 MHz

30

1. Most accurate value for the capacitive charge:

Figure 1. Forward voltage drop versus forward

current (typical values, low level, per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, high level, per diode)

Figure 3. Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 4. Peak forward current versus case

temperature

(per diode)

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